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KMID : 0381920110410020089
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Korean Journal of Microscopy
2011 Volume.41 No. 2 p.89 ~ p.98
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Nano Scale Compositional Analysis by Atom Probe Tomography: II. Applications on Electronic Devices and Nano Materials
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Jung Woo-Young
Bang Chan-Woo
Jang Dong-Hyun
Gu Gil-Ho
Park Chan-Gyung
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Abstract
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Atom Probe Tomography (APT) can provide 3-dimensional information such as position and chemical composition with atomic resolution. Despite the ability of this technique, APT could not be applied for poor conductive materials such as semiconductor. Recently APT has dramatically developed by applying the laser pulsing and combining with Focused Ion Beam (FIB). The invention and combination of these techniques make possible site-specific sample preparation and permit the investigation of various materials including insulators. In this paper, we introduced the recently achieved state of the art applications of APT focusing on Si based FET devices, LED devices, low dimensional materials.
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KEYWORD
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Atom probe tomography, Si MOSFET, InGaN Multi quantum well, Nanowire, Dopant
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